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STH200N10WF7-2

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N-channel 100 V, 4.8 mOhm typ., 180 A STripFET F7 Power MOSFET in an H2PAK-2 package

Quantity $ per Unit Savings
1 - 9$7.100%
10$6.4110%
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In stock
$7.10
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1
GradeIndustrial
Package NameH2PAK-2

This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.

Key features
  • Best-in-class SOA capability
  • High current surge capability
  • Extremely low on-resistance