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STH200N10WF7-2
N-channel 100 V, 3.2 mOhm typ., 180 A, STripFET F7 Power MOSFET in an H2PAK-2 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Industrial |
| Package Name | H2PAK-2 |
This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $6.44 | 0% |
| 10-99 | $4.45 | 31% |
| 100-499 | $3.30 | 49% |
| 500 | $2.89 | 55% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Industrial |
| Package Name | H2PAK-2 |
This N-channel Power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and...
Read More
|