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    STH260N6F6-2

    N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

    Key features
    Key features
    • Low gate charge
    • Very low on-resistance
    • High avalanche ruggedness
    In stock
    Quantity $ per unit Savings
    1-9$3.730%
    10-25$3.496%
    25 + Contact sales
    $3.73
    $3.73
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

    Key features
    Key features
    • Low gate charge
    • Very low on-resistance
    • High avalanche ruggedness