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STH280N10F8-2

N-channel 100 V, 1.9 mOhm max, 292 A STripFET F8 Power MOSFET in an H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameH2PAK-2

The STH280N10F8-2 is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and...
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Key features
  • 175 °C maximum operating junction temperature
  • 100% avalanche tested
  • Excellent FoM (figure of merit)
Out of Stock
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameH2PAK-2

The STH280N10F8-2 is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and...
Read More

Key features
  • 175 °C maximum operating junction temperature
  • 100% avalanche tested
  • Excellent FoM (figure of merit)