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STH320N4F6-6
N-channel 40 V, 1.1 mOhm typ., 200 A STripFET F6 Power MOSFET in H2PAK-6 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Automotive |
| Package Name | H2PAK-6 |
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $4.60 | 0% |
| 10-99 | $3.30 | 28% |
| 100-499 | $2.51 | 45% |
| 500 | $2.18 | 53% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Automotive |
| Package Name | H2PAK-6 |
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
|