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    STH320N4F6-6

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    N-channel 40 V, 1.1 mOhm typ., 200 A STripFET F6 Power MOSFET in H2PAK-6 package
    Learn More about STH320N4F6-6

    Quantity $ per Unit Savings
    1 - 9$5.080%
    10 - 99$4.5710%
    100 - 499$3.7426%
    500$3.1837%
    500 + Contact Sales
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1
    GradeAutomotive
    Package NameH2PAK-6

    These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

    Key features
    • AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss