Active
N-channel 40 V, 1.1 mOhm typ., 200 A STripFET F6 Power MOSFET in H2PAK-6 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Automotive |
| Package Name | H2PAK-6 |
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
|
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $4.86 | 0% |
| 10-99 | $3.23 | 33% |
| 100-499 | $2.30 | 53% |
| 500 | $2.18 | 55% |
| 500 + |
Contact sales |
|
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Automotive |
| Package Name | H2PAK-6 |
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
|