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STH320N4F6-6

Active

N-channel 40 V, 1.1 mOhm typ., 200 A STripFET F6 Power MOSFET in H2PAK-6 package

Quantity $ per Unit Savings
1 - 9$5.310%
10 - 24$4.7810%
25 - 99$4.5215%
100 - 499$3.9226%
500$3.3437%
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Out of stock
$5.31
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1
GradeAutomotive
Package NameH2PAK-6

These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.

Key features
  • AEC-Q101 qualified
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss