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    STH345N6F7-2

    N-channel 60 V, 1.2 mOhm max., 397 A STripFET F7 Power MOSFET in an H2PAK-2 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness
    Out of Stock
    Quantity $ per unit Savings
    1-500$4.980%
    500 + Contact sales
    $4.98
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Among the lowest RDS(on) on the market
    • Excellent FoM (figure of merit)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness