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N-channel 60 V, 1.2 mOhm max., 397 A STripFET F7 Power MOSFET in an H2PAK-6 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | H2PAK-6 |
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 |
| Grade | Industrial |
| Package Name | H2PAK-6 |
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
|