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STH3N150-2

Active

N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in H2PAK-2 package

Quantity $ per Unit Savings
1 - 9$5.830%
10 - 24$5.2410%
25 - 99$4.9615%
100 - 240$4.3026%
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Out of stock
$5.83
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1
GradeIndustrial
Package NameH2PAK-2

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Key features
  • 100% avalanche tested
  • Intrinsic capacitances and Qg minimized
  • High speed switching
  • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)