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STH3N150-2

N-channel 1500 V, 6 Ohm typ., 2.5 A PowerMESH power MOSFET in H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameH2PAK-2

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Key features
  • 100% avalanche tested
  • Intrinsic capacitances and Qg minimized
  • High speed switching
  • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
In stock
Quantity $ per unit Savings
1-9$5.160%
10-24$4.3615%
25-99$4.2717%
100-240$3.5631%
Contact sales
$5.16
$5.15
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameH2PAK-2

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Key features
  • 100% avalanche tested
  • Intrinsic capacitances and Qg minimized
  • High speed switching
  • Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)