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    STH410N4F7-2AG

    Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1 (*)
    GradeAutomotive
    Package NameH2PAK-2
    Description

    This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Designed for automotive applications and AEC-Q101 qualified
    • Among the lowest RDS(on) on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness
    In stock
    Quantity $ per unit Savings
    1-50$5.790%
    50 + Contact sales
    $5.79
    $5.79
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1 (*)
    GradeAutomotive
    Package NameH2PAK-2
    Description

    This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Designed for automotive applications and AEC-Q101 qualified
    • Among the lowest RDS(on) on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Ciss ratio for EMI immunity
    • High avalanche ruggedness