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STH410N4F7-2AG
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Automotive |
| Package Name | H2PAK-2 |
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $7.40 | 2% |
| 10-99 | $4.99 | 31% |
| 100-499 | $3.63 | 50% |
| 500 | $3.46 | 52% |
| 500 + | Contact sales | |
$7.40
$7.25
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Automotive |
| Package Name | H2PAK-2 |
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
|