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STH60N099DM9-2AG

Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET in an H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameH2PAK-2

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which...
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Key features
  • AEC-Q101 qualified
  • Fast-recovery body diode
  • Worldwide best RDS(on) per area among silicon-based fast recovery devices
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely dv/dt ruggednes
  • Excellent switching performance thanks to the extra driving source pin
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Quantity $ per unit Savings
1-9$4.980%
10-15$4.1816%
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$4.98
$4.98
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ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameH2PAK-2

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which...
Read More

Key features
  • AEC-Q101 qualified
  • Fast-recovery body diode
  • Worldwide best RDS(on) per area among silicon-based fast recovery devices
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely dv/dt ruggednes
  • Excellent switching performance thanks to the extra driving source pin