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    STH60N099DM9-2AG

    Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET in an H2PAK-2 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameH2PAK-2
    Description

    This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which...
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    Key features
    Key features
    • AEC-Q101 qualified
    • Fast-recovery body diode
    • Worldwide best RDS(on) per area among silicon-based fast recovery devices
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggednes
    In stock
    Quantity $ per unit Savings
    1-9$4.980%
    10-15$4.1816%
    15 + Contact sales
    $4.98
    $4.98
    or
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeAutomotive
    Package NameH2PAK-2
    Description

    This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which...
    Read More

    Key features
    Key features
    • AEC-Q101 qualified
    • Fast-recovery body diode
    • Worldwide best RDS(on) per area among silicon-based fast recovery devices
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggednes