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STH6N95K5-2

N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeIndustrial
Package NameH2PAK-2

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Industry’s lowest RDS(on) x area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected
In stock
Quantity $ per unit Savings
1-9$3.200%
10-99$2.1832%
100-249$1.5751%
250-499$1.5651%
500$1.2959%
Contact sales
$3.20
$3.19
or
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeIndustrial
Package NameH2PAK-2

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Industry’s lowest RDS(on) x area
  • Industry’s best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected