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STH80N10LF7-2AG

N-channel 100 V, 0.008 Ohm typ., 80 A STripFET F7 Power MOSFET in H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeAutomotive
Package NameH2PAK-2

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • AEC-Q101 qualified
  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness
Out of Stock
Quantity $ per unit Savings
1-500$2.940%
Contact sales
$2.94
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1 (*)
GradeAutomotive
Package NameH2PAK-2

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • AEC-Q101 qualified
  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness