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STI4N62K3

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N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAK package

Quantity $ per Unit Savings
1 - 9$1.260%
10 - 99$1.1410%
100 - 499$0.8930%
500$0.7342%
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In stock
$1.26
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameI2PAK

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

Key features
  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected