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STL11N3LLH6

N-channel 30 V, 6 mOhm typ., 11 A STripFET H6 Power MOSFET in a PowerFLAT(TM) 3.3 x 3.3 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 3.3x3.3

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
In stock
Quantity $ per unit Savings
1-9$1.370%
10-99$1.1318%
100$0.8736%
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$1.37
$1.37
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 3.3x3.3

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss