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    STL3N65M2

    N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3x3.3 HV package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerFLAT 3.3x3.3 HV
    Description

    This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    Key features
    Key features
    • Extremely low gate charge
    • Excellent output capacitance (Coss) profile
    • 100% avalanche tested
    • Zener-protected
    In stock
    Quantity $ per unit Savings
    1-9$1.040%
    10-99$0.8221%
    100-200$0.6538%
    200 + Contact sales
    $1.04
    $1.04
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerFLAT 3.3x3.3 HV
    Description

    This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    Key features
    Key features
    • Extremely low gate charge
    • Excellent output capacitance (Coss) profile
    • 100% avalanche tested
    • Zener-protected