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    STL4N80K5

    N-channel 800 V, 2.1 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerFLAT 5x6 VHV
    Description

    This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    Key features
    Key features
    • Industry’s lowest RDS(on)x area
    • Industry’s best figure of merit (FoM)
    • Ultra low gate charge
    • 100% avalanche tested
    • Zener protected
    Out of Stock
    Quantity $ per unit Savings
    1-9$1.900%
    10-50$1.7110%
    50 + Contact sales
    $1.90
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePowerFLAT 5x6 VHV
    Description

    This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

    Key features
    Key features
    • Industry’s lowest RDS(on)x area
    • Industry’s best figure of merit (FoM)
    • Ultra low gate charge
    • 100% avalanche tested
    • Zener protected