Shipping Delays — We are currently experiencing unusually high order volume, which is affecting order processing. As a result, shipments may be delayed. We are working to get orders out as quickly as possible.
Active
N-channel 30 V, 0.021 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 2x2 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerFLAT 2x2 |
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
|
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $0.98 | 2% |
| 10-99 | $0.45 | 53% |
| 100-499 | $0.40 | 59% |
| 500 | $0.31 | 68% |
| 500 + |
Contact sales |
|
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | PowerFLAT 2x2 |
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
|