STL9P3LLH6

P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	PowerFLAT 3.3x3.3

Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R_DS(on) in all packages.

Key features

Key features
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss

In stock

Quantity	$ per unit	Savings
1-9	$1.10	0%
10-99	$0.95	13%
100-250	$0.74	32%
250 +	Contact sales

$1.10

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	PowerFLAT 3.3x3.3

Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low R_DS(on) in all packages.

Key features

Key features
Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss