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STL9P3LLH6

P-channel -30 V, 12 mOhm typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 3.3x3.3

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
In stock
Quantity $ per unit Savings
1-9$1.350%
10-24$0.8934%
25-99$0.8934%
100-249$0.6552%
250-499$0.6452%
500$0.5262%
Contact sales
$1.35
$1.35
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NamePowerFLAT 3.3x3.3

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss