STN3P6F6

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P-channel -60 V, 0.13 Ohm typ., -3 A STripFET F6 Power MOSFET in a SOT-223 package

Quantity $ per Unit Savings
1 - 9$0.980%
10 - 99$0.8810%
100 - 400$0.6930%
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Out of stock
$0.98
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSOT-223

This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss