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    STN6N60M2

    N-channel 600 V, 1.00 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a SOT223-2 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSOT223-2
    Description

    This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    Key features
    Key features
    • Extremely low gate charge
    • Excellent output capacitance (COSS)
    • 100% avalanche tested
    • Zener-protected
    In stock
    Quantity $ per unit Savings
    1-9$0.691%
    10-99$0.6112%
    100$0.4733%
    100 + Contact sales
    $0.69
    $0.69
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameSOT223-2
    Description

    This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    Key features
    Key features
    • Extremely low gate charge
    • Excellent output capacitance (COSS)
    • 100% avalanche tested
    • Zener-protected