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STN6N60M2

N-channel 600 V, 1.00 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a SOT223-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSOT223-2

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key features
  • Extremely low gate charge
  • Excellent output capacitance (COSS)
  • 100% avalanche tested
  • Zener-protected
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Quantity $ per unit Savings
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10-99$0.605%
100$0.4037%
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$0.63
$0.63
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameSOT223-2

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key features
  • Extremely low gate charge
  • Excellent output capacitance (COSS)
  • 100% avalanche tested
  • Zener-protected