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    Special offer on selected Evaluation Tools. Use code AUG-EVALTOOLS-01-10OFF and explore the full selection. Buy now!

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    STO60N045DM9

    N-channel 600 V, 35 mOhm typ., 56 A MDmesh DM9 Power MOSFET in a TO-LL package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-LL
    Description

    This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which...
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    Key features
    Key features
    • Fast-recovery body diode
    • Very low FOM (RDS(on)•Qg)
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggednes
    • Excellent switching performance thanks to the extra driving source pin
    Out of Stock
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-LL
    Description

    This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which...
    Read More

    Key features
    Key features
    • Fast-recovery body diode
    • Very low FOM (RDS(on)•Qg)
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggednes
    • Excellent switching performance thanks to the extra driving source pin