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STP160N3LL

N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
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10-50$0.8015%
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$0.94
$0.94
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss