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    main product photo

    NRND

    STP170N8F7

    N-channel 80 V, 0.003 Ohm typ., 120 A STripFET F7 Power MOSFET in a TO-220 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220
    Description

    This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Among the lowest RDS(on)on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Cissratio for EMI immunity
    • High avalanche ruggedness
    In stock
    Quantity $ per unit Savings
    1-500$3.580%
    500 + Contact sales
    $3.58
    $3.58
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220
    Description

    This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

    Key features
    Key features
    • Among the lowest RDS(on)on the market
    • Excellent figure of merit (FoM)
    • Low Crss/Cissratio for EMI immunity
    • High avalanche ruggedness