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    STP180N4F6

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    N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F6 Power MOSFET in a TO-220 package
    Learn More about STP180N4F6

    Quantity $ per Unit Savings
    1 - 9$2.180%
    10 - 24$1.9710%
    25 - 50$1.8615%
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    In stock
    $2.18
    or
    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220

    This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss