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STP180N4F6

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N-channel 40 V, 2.1 mOhm typ., 120 A STripFET F6 Power MOSFET in a TO-220 package

Quantity $ per Unit Savings
1 - 9$2.180%
10 - 24$1.9710%
25 - 50$1.8615%
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In stock
$2.18
or
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss