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STP24N60DM2

N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's...
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Key features
  • Extremely low gate charge and input capacitance
  • Lower RDS(on)x area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • Extremely high dv/dt and avalanche capabilities
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Quantity $ per unit Savings
1-9$3.330%
10-24$3.185%
25-50$2.3131%
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$3.33
$3.33
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's...
Read More

Key features
  • Extremely low gate charge and input capacitance
  • Lower RDS(on)x area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • Extremely high dv/dt and avalanche capabilities