STP24N60DM2 Active
Free

N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220 package
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameTO-220AB
Key Features
  • Extremely low gate charge and input capacitance
  • Lower RDS(on)x area vs previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • Extremely high dv/dt and avalanche capabilities

These FDmesh II Plus™ low QgPower MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

In stock:
$2.60
or
Range Unit Price Savings
1 - 9$2.600%
10 - 99$2.2115%
100 - 499$1.7632%
500$1.5740%
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