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STP60N043DM9

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N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package

Quantity $ per Unit Savings
1 - 9$12.330%
10 - 24$11.1410%
25 - 99$10.6214%
100 - 499$9.2225%
500$8.0435%
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Out of stock
$12.33
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Key features
  • Fast-recovery body diode
  • Worldwide best RDS(on) per area among silicon-based fast recovery devices
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness