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    STP60N043DM9

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    N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET in a TO-220 package
    Learn More about STP60N043DM9

    Quantity $ per Unit Savings
    1 - 9$12.330%
    10 - 24$11.1410%
    25 - 99$10.6214%
    100 - 499$9.2225%
    500$8.0435%
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220

    This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Qrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

    Key features
    • Fast-recovery body diode
    • Worldwide best RDS(on) per area among silicon-based fast recovery devices
    • Low gate charge, input capacitance and resistance
    • 100% avalanche tested
    • Extremely high dv/dt ruggedness