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STP60N043DM9

N-channel 600 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a TO-220 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which...
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Key features
  • Fast-recovery body diode
  • Worldwide best RDS(on) per area among silicon-based fast recovery devices
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
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Quantity $ per unit Savings
1-9$10.500%
10-20$9.0014%
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$10.50
$10.50
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ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which...
Read More

Key features
  • Fast-recovery body diode
  • Worldwide best RDS(on) per area among silicon-based fast recovery devices
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness