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STP65N045M9

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N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package

Quantity $ per Unit Savings
1 - 9$11.640%
10 - 24$10.5210%
25 - 99$10.0214%
100 - 249$8.7025%
250 - 499$8.3129%
500$7.5835%
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In stock
$11.64
or
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Key features
  • Worldwide best FOM RDS(on)*Qg among silicon-based devices
  • Higher VDSS rating
  • Higher dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested