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STP80N1K1K6

N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET in a TO-220 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density...
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Key features
  • Worldwide best RDS(on) x area
  • Worldwide best FOM (figure of merit)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected
Out of Stock
Quantity $ per unit Savings
1-9$1.700%
10-99$1.4117%
100-249$1.1334%
250-499$1.0439%
500$0.9445%
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$1.70
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220

This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density...
Read More

Key features
  • Worldwide best RDS(on) x area
  • Worldwide best FOM (figure of merit)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected