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STPSC10065D
650 V power Schottky silicon carbide diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $3.29 | 0% |
| 10-24 | $3.21 | 2% |
| 25-99 | $1.68 | 49% |
| 100-499 | $1.62 | 51% |
| 500 | $1.44 | 56% |
| 500 + | Contact sales | |
$3.29
$3.29
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More
|