JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.
Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.Free shipping worldwide on featured products - use code JUNE22_FREESHIP at checkout! Start your design today.
Enter your email address to be notified when the product is available to order.
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
