STPSC10065DY

STPSC10065DY

STPSC10065GY-TR Active

Automotive 650 V, 10 A SiC Power Schottky Diode
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameD2PAK
Key Features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK®2 compliant component

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

In stock:
$2.69
Range Unit Price Savings
1 - 9$2.690%
10 - 99$2.2815%
100 - 499$1.7336%
500$1.6340%
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