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    STPSC10H065DLF

    650 V 10 A power Schottky silicon carbide diode

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePOWER FLAT MLPD 8X8 4L MIXPLANT
    Description

    This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
    Read More

    Key features
    Key features
    • Less than 1 mm height package
    • High creepage package
    • No or negligible reverse recovery
    • Temperature independent switching behavior
    • High forward surge capability
    • Very low drop forward voltage
    • Power efficient product
    • ECOPACK2 compliant component
    In stock
    Quantity $ per unit Savings
    1-25$3.960%
    25 + Contact sales
    $3.96
    $3.96
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NamePOWER FLAT MLPD 8X8 4L MIXPLANT
    Description

    This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
    Read More

    Key features
    Key features
    • Less than 1 mm height package
    • High creepage package
    • No or negligible reverse recovery
    • Temperature independent switching behavior
    • High forward surge capability
    • Very low drop forward voltage
    • Power efficient product
    • ECOPACK2 compliant component