STPSC10H065DLF

650 V 10 A power Schottky silicon carbide diode

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	POWER FLAT MLPD 8X8 4L MIXPLANT

Description

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Key features

Key features
Less than 1 mm height package High creepage package No or negligible reverse recovery Temperature independent switching behavior High forward surge capability Very low drop forward voltage Power efficient product ECOPACK2 compliant component

Out of Stock

Quantity	$ per unit	Savings
1-9	$3.88	0%
10-25	$3.26	16%
25 +	Contact sales

$3.88

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	POWER FLAT MLPD 8X8 4L MIXPLANT

Description

Key features

Key features
Less than 1 mm height package High creepage package No or negligible reverse recovery Temperature independent switching behavior High forward surge capability Very low drop forward voltage Power efficient product ECOPACK2 compliant component