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    📢 Promotion ends on Mar. 31st! Get FREE SHIPPING for your automotive project! Order now! 🛒

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    STPSC10H065G2-TR

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    650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
    Learn More about STPSC10H065G2-TR

    Quantity $ per Unit Savings
    1 - 9$3.510%
    10 - 20$3.1610%
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    In stock
    $3.51
    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameH2PAK-2

    This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


    Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.


    The STPSC10H065G2 will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

    Key features
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • High forward surge capability
    • Operating Tj from -40 °C to 175 °C
    • Power efficient product
    • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
    • ECOPACK2 compliant component