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650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$3.510%
10 - 20$3.1610%
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In stock
Parameter NameParameter Value
Packing TypeTape And Reel
RoHs compliantEcopack2
Package NameH2PAK-2

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

The STPSC10H065G2 will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Power efficient product
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK2 compliant component