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STPSC10H065G2-TR

650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameH2PAK-2

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Power efficient product
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK2 compliant component
In stock
Quantity $ per unit Savings
1-9$3.400%
10-20$2.8616%
Contact sales
$3.40
$3.40
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameH2PAK-2

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Power efficient product
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK2 compliant component