STPSC10H065G2-TR

650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	H2PAK-2

Description

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature High forward surge capability Operating T_j from -40 °C to 175 °C Power efficient product D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant component

In stock

Quantity	$ per unit	Savings
1-9	$3.40	0%
10-20	$2.86	16%
20 +	Contact sales

$3.40

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	H2PAK-2

Description

Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature High forward surge capability Operating T_j from -40 °C to 175 °C Power efficient product D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant component