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    STPSC10H065G2-TR

    650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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    Key features
    Key features
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • High forward surge capability
    • Operating Tj from -40 °C to 175 °C
    • Power efficient product
    • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
    • ECOPACK2 compliant component
    In stock
    Quantity $ per unit Savings
    1-9$3.565%
    10-20$2.6123%
    20 + Contact sales
    $3.56
    $3.40
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
    Read More

    Key features
    Key features
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • High forward surge capability
    • Operating Tj from -40 °C to 175 °C
    • Power efficient product
    • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
    • ECOPACK2 compliant component