🎉 Exclusive offer: FREE shipping of all MCU & MPU products. No code or minimum required. 🛒 Order now!

📢 Bonus offer: Get our latest VIPGAN65 board with Free shipping. Use code DV-EVLVIPGAN65DF-FREESHIP-05 at checkout! 🛒 Claim now!

Active

STPSC10H12CWL

1200 V, 10 A dual High Surge Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247 long leads

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is...
Read More

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK®2 compliant
In stock
Quantity $ per unit Savings
1-9$7.530%
10-24$5.2930%
25-99$5.1332%
100-500$3.8449%
Contact sales
$7.53
$7.53
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247 long leads

The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is...
Read More

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • ECOPACK®2 compliant