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    STPSC10H12CWL

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    1200 V, 10 A dual High Surge Silicon Carbide Power Schottky Diode
    Learn More about STPSC10H12CWL

    Quantity $ per Unit Savings
    1 - 9$7.070%
    10 - 80$6.3910%
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    In stock
    $7.07
    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247 long leads

    The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


    Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.

    Key features
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Robust high voltage periphery
    • Operating Tj from -40 °C to 175 °C
    • ECOPACK®2 compliant