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STPSC10H12G2-TR

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1200V, 10A, silicon carbide power Schottky Diode

Quantity $ per Unit Savings
1 - 9$6.460%
10 - 25$5.8110%
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Out of stock
$6.46
Parameter NameParameter Value
Operating RangeIndustrial
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameH2PAK-2

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.


The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating Tj from -40 °C to 175 °C
  • Low VF
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK2 compliant