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STPSC10H12G2-TR
1200V, 10A, silicon carbide power Schottky Diode
| Operating Range | Industrial |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | H2PAK-2 |
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $5.40 | 0% |
| 10-99 | $3.79 | 30% |
| 100-499 | $2.82 | 48% |
| 500 | $2.53 | 53% |
| 500 + | Contact sales | |
| Operating Range | Industrial |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | H2PAK-2 |
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off...
Read More
|