Active
STPSC10H12GY-TR
Automotive 1200 V, 10 A Silicon Carbide Power Schottky Diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | D2PAK |
The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no...
Read More
|
In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $4.63 | 0% |
| 10-99 | $3.96 | 14% |
| 100-249 | $3.34 | 28% |
| 250 | $3.33 | 28% |
| 250 + | Contact sales | |
$4.63
$4.63
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | D2PAK |
The SiC diode, available in TO-220AC and D²PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no...
Read More
|