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Automotive 650 V, 12 A SiC Power Schottky Diode
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | TO-220AC |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $2.98 | 1% |
10-24 | $2.94 | 0% |
25-99 | $1.98 | 33% |
100-249 | $1.88 | 36% |
250-499 | $1.87 | 36% |
500 | $1.75 | 40% |
500 + |
Contact sales |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | TO-220AC |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|