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STPSC12C065DY

Active

Automotive 650 V, 12 A SiC Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$4.450%
10 - 99$4.0110%
100 - 499$3.2826%
500$2.7937%
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In stock
$4.45
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameTO-220AC

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications.


Especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • AEC-Q101 qualified
  • PPAP capable
  • ECOPACKĀ®2 compliant component