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STPSC12G065D
650 V, 12A High surge Silicon Carbide power Schottky diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
The SiC diode STPSC12G065, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $3.45 | 0% |
| 10-99 | $1.74 | 49% |
| 100-499 | $1.58 | 54% |
| 500 | $1.28 | 63% |
| 500 + | Contact sales | |
$3.45
$3.45
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | TO-220AC |
The SiC diode STPSC12G065, available in TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no...
Read More
|