STPSC12H065DY Active

Automotive 650 V, 12 A High Surge Silicon Carbide Power Schottky Diode
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameTO-220AC
Key Features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • PPAP capable
  • ECOPACK®2 compliant component

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

In stock:
$3.13
Range Unit Price Savings
1 - 9$3.130%
10 - 99$2.6615%
100 - 249$2.1332%
250 - 499$2.0136%
500$1.8940%
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