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1200 V, 15 A High Surge Silicon Carbide Power Schottky Diode
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | DO247 LONG LEADS |
The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction,...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $4.88 | 0% |
10-99 | $3.65 | 26% |
100-500 | $3.53 | 28% |
500 + |
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ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | DO247 LONG LEADS |
The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction,...
Read More
|