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STPSC15H12D

STPSC15H12D

Active

STPSC15H12WL

1200 V, 15 A High Surge Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameDO247 LONG LEADS

The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction,...
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Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating from -40 °C to 175 °C
  • Low VF
  • ECOPACK2 compliant component
In stock
Quantity $ per unit Savings
1-9$4.800%
10-99$3.8420%
100-500$3.5626%
Contact sales
$4.80
$4.80
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameDO247 LONG LEADS

The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction,...
Read More

Key features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating from -40 °C to 175 °C
  • Low VF
  • ECOPACK2 compliant component