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STPSC15H12WL
1200 V, 15 A High Surge Silicon Carbide Power Schottky Diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | DO247 LONG LEADS |
The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction,...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $5.38 | 0% |
| 10-99 | $3.80 | 29% |
| 100-500 | $3.56 | 34% |
| 500 + | Contact sales | |
$5.38
$5.38
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | DO247 LONG LEADS |
The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction,...
Read More
|