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STPSC16H065AW

650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
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Key features
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Power efficient product
  • ECOPACK®2 compliant
In stock
Quantity $ per unit Savings
1-9$5.310%
10-99$4.4616%
100-249$3.6132%
250-500$3.2439%
Contact sales
$5.31
$5.31
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and...
Read More

Key features
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Power efficient product
  • ECOPACK®2 compliant