STPSC16H065AW Active
Free

650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameTO-247
Key Features
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Power efficient product
  • ECOPACK®2 compliant

The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, this ST SiC diode, packaged in TO-247, will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

In stock:
$4.17
or
Range Unit Price Savings
1 - 9$4.180%
10 - 99$3.5515%
100 - 249$2.6936%
250 - 499$2.6636%
500$2.5838%
Contact Sales