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STPSC16H065AW

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650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$6.100%
10 - 99$5.5010%
100 - 500$4.5126%
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In stock
$6.11
or
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameTO-247

The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, this ST SiC diode, packaged in TO-247, will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Key features
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Operating Tj from -40 °C to 175 °C
  • Power efficient product
  • ECOPACK®2 compliant