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STPSC20065D

STPSC20065D

STPSC20065W

STPSC20065W

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STPSC20065DI

650 V power Schottky silicon carbide diode

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220AC Ins

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • Insulated package TO-220AC ins:
    • Insulated voltage: 2500 V
      rms
    • Typical package capacitance: 7
      pF
  • High forward surge capability
  • ECOPACK®2 compliant component
  • Maximum operating: Tj 175 °C
In stock
Quantity $ per unit Savings
1-9$6.140%
10-60$4.8721%
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$6.14
$6.13
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220AC Ins

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • Insulated package TO-220AC ins:
    • Insulated voltage: 2500 V
      rms
    • Typical package capacitance: 7
      pF
  • High forward surge capability
  • ECOPACK®2 compliant component
  • Maximum operating: Tj 175 °C