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STPSC20065D

STPSC20065D

STPSC20065W

STPSC20065W

STPSC20065DI

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650 V power Schottky silicon carbide diode

Quantity $ per Unit Savings
1 - 9$6.740%
10 - 60$6.1010%
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$6.74
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220AC Ins

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Key features
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • Insulated package TO-220AC ins:
    • Insulated voltage: 2500 V
      rms
    • Typical package capacitance: 7
      pF
  • High forward surge capability
  • ECOPACK®2 compliant component
  • Maximum operating: Tj 175 °C