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STPSC20065GY-TR

STPSC20065GY-TR

STPSC20065WY

STPSC20065WY

STPSC20065DY

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Automotive 650 V, 20 A SiC Power Schottky Diode

Quantity $ per Unit Savings
1 - 9$8.720%
10$7.8910%
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$8.72
Parameter NameParameter Value
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameTO-220AC

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • ECOPACK®2 compliant component
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C