STPSC20065DY

STPSC20065DY

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STPSC20065GY-TR

Automotive 650 V, 20 A SiC Power Schottky Diode

Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameD2PAK

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • ECOPACK®2 compliant component
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
In stock
Quantity $ per unit Savings
1-9$6.380%
10-20$5.3616%
Contact sales
$6.38
$6.38
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeAutomotive
Package NameD2PAK

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More

Key features
  • AEC-Q101 qualified
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • ECOPACK®2 compliant component
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C