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STPSC20065W
650 V power Schottky silicon carbide diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | DO-247 |
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-24 | $7.04 | 0% |
| 25-99 | $5.09 | 28% |
| 100-249 | $4.12 | 42% |
| 250-500 | $3.88 | 45% |
| 500 + | Contact sales | |
$7.04
$7.04
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | DO-247 |
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|