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STPSC20G12L2Y
Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 (**) |
| Grade | Automotive |
| Package Name | HU3PAK |
The SiC diode, available in HU3PAK (SMD topside cooling package), is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $13.47 | 2% |
| 10-99 | $10.04 | 24% |
| 100-500 | $8.37 | 37% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 (**) |
| Grade | Automotive |
| Package Name | HU3PAK |
The SiC diode, available in HU3PAK (SMD topside cooling package), is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky...
Read More
|