STPSC20G12L2Y

The SiC diode, available in HU3PAK (SMD topside cooling package), is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Based on the latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode will boost the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.