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Automotive 650 V, 20 A High Surge Silicon Carbide Power Schottky Diode
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | TO-220AB |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $8.04 | 0% |
10-99 | $3.84 | 52% |
100-500 | $3.65 | 55% |
500 + |
Contact sales |
Operating Temp Min Celsius | -40.0 |
Operating Temp Max Celsius | 175.0 |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Automotive |
Package Name | TO-220AB |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|