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    STPSC20H065CW

    650 V, 20 A dual High Surge Silicon Carbide Power Schottky Diode

    Parameters
    Operating RangeIndustrial
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247
    Description

    The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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    Key features
    Key features
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Dedicated to PFC applications
    • High forward surge capability
    In stock
    Quantity $ per unit Savings
    1-10$6.300%
    10 + Contact sales
    $6.30
    $6.30
    Parameters
    Operating RangeIndustrial
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-247
    Description

    The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
    Read More

    Key features
    Key features
    • No or negligible reverse recovery
    • Switching behavior independent of temperature
    • Dedicated to PFC applications
    • High forward surge capability