STPSC20H065CWY

Automotive 650 V, 20 A High Surge Silicon Carbide Power Schottky Diode

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	TO-247

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability AEC-Q101 qualified ECOPACK^®2 compliant component PPAP capable

In stock

Quantity	$ per unit	Savings
1-9	$6.56	0%
10	$4.68	29%
10 +	Contact sales

$6.56

Parameters

Operating Temp Min Celsius	-40.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	TO-247

Description

Key features

Key features
No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability AEC-Q101 qualified ECOPACK^®2 compliant component PPAP capable