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STPSC20H065CWY
Automotive 650 V, 20 A High Surge Silicon Carbide Power Schottky Diode
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | TO-247 |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $7.36 | 0% |
| 10-24 | $7.30 | 1% |
| 25-99 | $4.21 | 43% |
| 100-249 | $3.85 | 48% |
| 250-500 | $3.41 | 54% |
| 500 + | Contact sales | |
| Operating Temp Min Celsius | -40.0 |
| Operating Temp Max Celsius | 175.0 |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | TO-247 |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|