STPSC20H065CWY Active

Automotive 650 V, 20 A High Surge Silicon Carbide Power Schottky Diode
Operating Temp Min Celsius-40.0
Operating Temp Max Celsius175.0
Packing TypeTube
ROHS Compliance GradeEcopack2
Package NameTO-247
Key Features
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Dedicated to PFC applications
  • High forward surge capability
  • AEC-Q101 qualified
  • ECOPACK®2 compliant component
  • PPAP capable

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications.

Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

In stock:
Range Unit Price Savings
1 - 9$6.300%
10 - 99$5.4314%
100 - 249$4.5029%
250 - 499$4.2333%
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