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STPSC20H12GY-TR

STPSC20H12GY-TR

STPSC20H12DY

Active

Automotive 1200 V, 20 A Silicon Carbide Diode

Quantity $ per Unit Savings
1 - 9$12.540%
10$11.3410%
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In stock
$12.54
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameTO-220AC

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK compliant