Active
STPSC20H12G2Y-TR
Automotive 1200 V, 20 A Silicon Carbide Diode
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | D2PAK HV |
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|
In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $10.26 | 2% |
| 10-99 | $7.20 | 31% |
| 100-500 | $5.45 | 48% |
| 500 + | Contact sales | |
$10.26
Special Price
$10.26
Regular Price
$10.42
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | D2PAK HV |
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing...
Read More
|