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STPSC20H12GY-TR

STPSC20H12GY-TR

STPSC20H12G2Y-TR

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Automotive 1200 V, 20 A Silicon Carbide Diode

Quantity $ per Unit Savings
1 - 9$12.810%
10 - 99$11.5810%
100 - 499$9.5825%
500$8.3535%
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In stock
$12.81
or
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameD2PAK HV

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.


Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Key features
  • AEC-Q101 qualified
  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • PPAP capable
  • Operating Tj from -40 °C to 175 °C
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
  • ECOPACK compliant